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SCT055W65G3-4AG

Part number SCT055W65G3-4AG
Product classification Single FETs, MOSFETs
Manufacturer STMicroelectronics
Description TO247-4
Encapsulation
Packing Tube
Quantity 1200
RoHS status YES
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Total number

Quantity

Price

Total price

600

$9.3030

$5,581.8000

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Product parameters
Product Description
TYPEDESCRIPTION
MfrSTMicroelectronics
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 200°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs72mOhm @ 15A, 18V
Power Dissipation (Max)210W (Tc)
Vgs(th) (Max) @ Id4.2V @ 1mA
Supplier Device PackageTO-247-4
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Vgs (Max)+18V, -5V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds721 pF @ 40 V
QualificationAEC-Q101

Alternative models
SCT055W65G3-4AG
意法-ST
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package
Similar models
SCT055W65G3-4AG
意法-ST
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package

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